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 M52055P
3-Channel Analog Switch
REJ03F0083-0100Z Rev.1.0 Sep.22.2003
Description
The M52055 is semiconductor integrated circuit for electronic switches used in VCR, AUDIO signal processing applications. It contains three channel two input switch circuits with each switch is controlled independently.
Features
* * * * * * * Low offset voltage at output: Typ. 5 mV UNDER Low switching noise Wide dynamic range Wide frequency range: Typ. 40 MHz OVER Low crosstalk High speed response: Typ. 0.2 s UNDER Low power consumption
Application
* VCR, AUDIO, and other applications
Recommended Operating Condition
* Supply voltage range: 4.5 to 13 V
Block Diagram
Rev.1.0, Sep.22.2003, page 1 of 13
M52055P
Pin Configuration
Absolute Maximum Rating
(Unless otherwise noted, Ta = 25C)
Symbol Vcc Pd Topr Tstg k Item Supply voltage Power dissipation Operating ambient temperature Storing temperature Thermal derating Ratings 14 1000 -20 to 75 -40 to 125 10 Units V mW C C mW/C
Thermal Derating Curve
Rev.1.0, Sep.22.2003, page 2 of 13
M52055P
Electrical Characteristics
(unless otherwise noted, the ambient temperature (Ta) = 25C, power supply voltage (Vcc) = 9 V, and current direction = current flowing into the IC is "+")
No. 1 Measurement item Circuit current 1 Symbol ICC1 Measurement conditions No signal input. Measure the current flowing into pin 13 . No signal input. Measure the current flowing into pin 13 with Vcc = 5 V. Input: 0.5-Vpp sine wave (SG1). Voltage gain at 10-MHz frequency. E1, E2 and E3: 5 V. 2-k load connected to output pin. Limits Min. 5.2 Typ. 7.1 Max. 9.0 mA Unit
2
Circuit current 2
ICC2
2.4
3.4
4.4
mA
3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33a 33b 34a 34b 35a 35b
S1 frequency characteristics 1A, 1B S2 frequency characteristics 2A, 2B S3 frequency characteristics 3A, 3B S1 voltage gain 1A, 1B S2 voltage gain 2A, 2B S3 voltage gain 3A, 3B S1 input bias voltage 1A, 1B S2 input bias voltage 2A, 2B S3 input bias voltage 3A, 3B S1 output bias voltage S2 output bias voltage S3 output bias voltage Current flow into control pins 1: S1, S2, S3 Current flow into control pins 2: S1, S2, S3 Current flow into control pins 3: S1, S2, S3 Threshold voltage S1, S2, S3
F1A F1B F2A F2B F3A F3B G1A G1B G2A G2B G3A G3B VIDC 1A VIDC 1B VIDC 2A VIDC 2B VIDC 3A VIDC 3B VODC 1 VODC 2 VODC 3 IIN 11 IIN 12 IIN 13 IIN 21 IIN 22 IIN 23 IIN 31 IIN 32 IIN 33 VIC1L VIC1H VIC2L VIC2H VIC3L VIC3H
-0.6 -0.6 -0.6 -0.6 -0.6
-0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 4.6 4.6 4.6 4.6 4.6 4.6 3.2 3.2 3.2 0.6 0.6 0.6 1.5 1.5 1.5 0 0 0 -- -- -- -- -- --
0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 5.1 5.1 5.1 5.1 5.1 5.1 3.35 3.35 3.35 1 1 1 10 10 10 2 2 2 2.7 2.7 2.7 2.7 2.7 2.7
dB dB dB dB dB dB dB dB dB dB dB dB V V V V V V V V V mA mA mA A A A A A A V V V V V V
-0.6 Input: 0.5-Vpp sine wave (SG1) -0.6 Voltage gain at 1-MHz frequency -0.6 E1, E2 and E3: 5 V -0.6 -0.6 -0.6 -0.6 No signal input. 4.1 DC voltage at input pin. 4.1 4.1 4.1 4.1 4.1 No signal input. 3.05 DC voltage at output pin. 3.05 Pins 2, 7 and 12 connected to 3.05 GND. Current flow into each of pins 2, 0.35 7 and 12 when these pin voltage 0.35 is 9 V. 0.35 Current flow into each of pins 2, 7 and 12 when these pin voltage is 5 V. Current flow into each of pins 2, 7 and 12 when these pin voltage is 0 V. Input: 0.5-Vpp sine wave, f = 1 MHz (SG1).*1 *2 0 0 0 -5 -5 -5 1.7 1.7 1.7 1.7 1.7 1.7
Rev.1.0, Sep.22.2003, page 3 of 13
M52055P
Electrical Characteristics (cont)
No. 36 37 38 39 40 Measurement item S1 2nd harmonic distortion 1A, 1B S2 2nd harmonic distortion 2A, 2B S3 2nd harmonic distortion 3A Symbol H1A H1B H2A H2B H3A Measurement conditions Input: 4.5-Vpp sine wave, f = 5 MHz (SG1). E1, E2 and E3: 5 V Voltage ratio of 10-MHz output element against 5-MHz output element 2-k load connected to output pin Input: 4.5-Vpp sine wave, f = 5 MHz (SG1). Measure THD with sine wave input of 1 Vrms and f = 5 MHz (SG1). E1, E2 and E3: 5 V. Limits Min. -- -- -- -- -- Typ. -60 -60 -60 -60 -60 Max. -50 -50 -50 -50 -50 dB dB dB dB dB Unit
41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77
S3 2nd harmonic distortion S1 total harmonic distortion ratio 1A, 1B S2 total harmonic distortion ratio 2A, 2B S3 total harmonic distortion ratio 3A, 3B S1 crosstalk 1B-1A, 1A-1B S2 crosstalk 2B-2A, 2A-2B S3 crosstalk 3B-3A, 3A-3B S1 crosstalk between channels 2A-1A, 2B-1A, 3A-1A, 3B-1A
H3B THD1A THD1B THD2A THD2B THD3A THD3B CT11 CT12 CT21 CT22 CT31 CT32 CT13 CT14 CT15 CT16 CT17 CT18 CT19 CT1A CT23 CT24 CT25 CT26 CT27 CT28 CT29 CT2A CT33 CT34 CT35 CT36 CT37 CT38 CT39 CT3A
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
-60 0.05 0.05 0.05 0.05 0.05 0.05 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70 -70
-50 0.2 0.2 0.2 0.2 0.2 0.2 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60
dB % % % % % % dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB
Input: 0.5-Vpp sine wave, f = 5 MHz (SG1). Voltage ratio of non-input-side output against input-side output when the non-input-side pin is connected to GND with 0.01 F. E1, E2 and E3: 5 V Input: 0.5-Vpp sine wave, f = 5 MHz (SG1). Voltage ratio of no-input-side output against input-side output when no-input-side pin is connected to GND with 0.01 F. E1, E2 and E3: 5 V
2A-1B, 2B-1B, 3A-1B, 3B-1B S2 crosstalk between channels 1A-2A, 1B-2A, 3A-2A, 3B-2A
1A-2B, 1B-2B, 3A-2B, 3B-2B S3 crosstalk between channels 1A-3A, 1B-3A, 2A-3A, 2B-3A
1A-3B, 1B-3B, 2A-3B, 2B-3B
Rev.1.0, Sep.22.2003, page 4 of 13
M52055P
Electrical Characteristics (cont)
No. 78 79 80 81a 81b 82a 82b 83a 83b 84a 84b 85a 85b 86a 86b Measurement item S1 output DC offset voltage S2 output DC offset voltage S3 output DC offset voltage Threshold voltage (Vcc = 5 V) S1, S2, S3 Symbol VOS1 VOS2 VOS3 VIC4L VIC4H VIC5L VIC5H VIC6L VIC6H VIC7L VIC7H VIC8L VIC8H VIC9L VIC9H Input: 0.5-Vp-p sine wave, f = 1 MHz (SG1). Vcc = 5 V.*4 *5 Measurement conditions Limits Min. -10 No signal input. E1, E2 and E3: 5 V. 3 DC voltage difference in output.* -10 -10 1.3 1.3 1.3 1.3 1.3 1.3 2.0 2.0 2.0 2.0 2.0 2.0 Typ. 0 0 0 -- -- -- -- -- -- -- -- -- -- -- -- Max. 10 10 10 2.3 2.3 2.3 2.3 2.3 2.3 3.0 3.0 3.0 3.0 3.0 3.0 mV mV mV V V V V V V V V V V V V Unit
Threshold voltage (Vcc = 12 V) S1, S2, S3
Input: 0.5-Vp-p sine wave, f = 1 MHz (SG1). 67 Vcc = 12 V.* *
Rev.1.0, Sep.22.2003, page 5 of 13
M52055P
Typical Characteristics
Rev.1.0, Sep.22.2003, page 6 of 13
M52055P
Method to Measure Electric Characteristics
1. Measurement Circuit
Rev.1.0, Sep.22.2003, page 7 of 13
M52055P 2 Measurement Conditions
No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33a 33b 34a 34b 35a 35b 36 37 38 39 40 41 Symbol ICC1 ICC2 F1A F1B F2A F2B F3A F3B G1A G1B G2A G2B G3A G3B VIDC 1A VIDC 1B VIDC 2A VIDC 2B VIDC 3A VIDC 3B VODC 1 VODC 2 VODC 3 IIN 11 IIN 12 IIN 13 IIN 21 IIN 22 IIN 23 IIN 31 IIN 32 IIN 33 VIC1L VIC1H VIC2L VIC2H VIC3L VIC3H H1A H1B H2A H2B H3A H3B Switch status S1 a a a b S2 a a S3 a a S4 d d a a b b c c d d d d d d d d d d d d d d d d d d d d d d d d d d b a b a b a b d a a b b c c S5 b b a a a a a a a a a a a b b b b b b b b b b b b b b b b b b b a b a b a b a b a b a b b b b b b b b b b b b b b b b b b a b a b a b a b a b a b S6 b b a S7 S8 S9 S10 S11 S12 Point to be measured A1 A1 V1 V1 V2 V2 V3 V3 V1 V1 V2 V2 V3 V3 V4 V4 V4 V4 V4 V4 V1 V2 V3 A2 A3 A4 A2 A3 A4 A2 A3 A4 E1Note1 E1Note2 E2Note1 E2Note2 E3 Note2 E3 V1 V1 V2 V2 V3 V3
Note1
a b a b a b a b a b a a a a a a a a a b b b b b b a a a b b
b a b b b b b a b b b b a b a a a a a b b
b b b b a b b b b b a b a a a a b a b b a
b b b b b a b b b b b a a a a a a b b b a
b b a b b b b b a b b b a a b a a a b a b
b b b a b b b b b a b b a a a b a a b a b
a b b b b b a b b b b b b a a a a a a b b
b a b b b a b b b b
b b a b b b b b a b
b b b a b b b b b a
b a b b b b a b b b
b b a b b b b a b b
a b b b a b b b b b
Rev.1.0, Sep.22.2003, page 8 of 13
M52055P Measurement Conditions (cont)
No. 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 Symbol THD1A THD1B THD2A THD2B THD3A THD3B CT11 CT12 CT21 CT22 CT31 CT32 CT13 CT14 CT15 CT16 CT17 CT18 CT19 CT1A CT23 CT24 CT25 CT26 CT27 CT28 CT29 CT2A CT33 CT34 CT35 CT36 CT37 CT38 CT39 CT3A VOS1 VOS2 VOS3 Switch status S1 a b a b a b a b a b a b a a a a b b b b b a b a b a b a b a a a a a b b b b S2 S3 S4 d d d d d d a a b b c c a a a a a a a a b b b b b b b b c c c c c c c c d a b a b d d S5 b a b a b a a b a b a b b a b a b a b a b a b a b a b a b a b a b a b a b b b S6 a b a b a b b a b a b a a b a b a b a b a b a b a b a b a b a b a b a b b b b S7 b a b b b b a a b b b b b b b b b b b b b a b b b a b b b a b b b a b b a b b S8 b b b b a b b b b b a a b b a b b b a b b b a b b b a b b b b b b b b b b b a S9 b b b b b a b b b b a a b b b a b b b a b b b a b b b a b b b b b b b b b b a S10 b b a b b b b b a a b b a b b b a b b b b b b b b b b b b b a b b b a b b a b S11 b b b a b b b b a a b b b a b b b a b b b b b b b b b b b b b a b b b a b a b S12 a b b b b b a a b b b b b b b b b b b b a b b b a b b b a b b b a b b b a b b Point to be measured V1 V1 V2 V2 V3 V3 V1 V1 V2 V2 V3 V3 V1 V1 V1 V1 V1 V1 V1 V1 V2 V2 V2 V2 V2 V2 V2 V2 V3 V3 V3 V3 V3 V3 V3 V3 V1 V2 V3
Note3
b a
b a
b a b a b a b a a b
b a a a a a b b b b
Note3
Note3
Rev.1.0, Sep.22.2003, page 9 of 13
M52055P Measurement Conditions (cont)
No. 81a 81b 82a 82b 83a 83b 84a 84b 85a 85b 86a 86b Symbol VIC4L VIC4H VIC5L VIC5H VIC6L VIC6H VIC7L VIC7H VIC8L VIC8H VIC9L VIC9H Switch status S1 b b b b b b S2 S3 S4 d d d d d d S5 b a b a b a b a b a b a S6 a b a b a b a b a b a b S7 b a b b b a b b S8 b b a b b b a b S9 b b b a b b b a S10 b a b b b a b b S11 b b a b b b a b S12 a b b b a b b b Point to be measured E1Note4 E1Note5 E2Note4 E2Note5 E3Note4 E3Note5 E1Note6 E1Note7 E2Note6 E2Note7 E3Note6 E3Note7
Notes: 1. For VIC1L, VIC2L and VIC3L, respectively read the E1, E2 and E3 voltage when their output amplitudes are 0.5 dB smaller than those of V1, V2 and V3 in measuring G1A in No. 9, G2A in No. 11 and G3A in No. 13. 2. For VIC1H, VIC2H and VIC3H, respectively read the E1, E2 and E3 voltage when their output amplitudes are 0.5 dB smaller than those of V1, V2 and V3 in measuring G1B in No. 10, G2B in No. 12 and G3B in No. 14. 3. Read the potential difference "VOS" = VH - VL, where VL indicates output voltage when the control voltage is 0 V and VH indicates output voltage when the control voltage is 5 V. 4. Vcc = 5 V. For VIC4L, VIC5L and VIC6L, respectively read the E1, E2 and E3 voltage when their output amplitudes are 1.0 dB smaller than those of V1, V2 and V3 in measuring G1A in No. 9, G2A in No. 11 and G3A in No. 13. 5. Vcc = 5 V. For VIC4H, VIC5H and VIC6H, respectively read the E1, E2 and E3 voltage when their output amplitudes are 1.0 dB smaller than those of V1, V2 and V3 in measuring G1B in No. 10, G2B in No. 12 and G3B in No. 14. 6. Same as 4 above except Vcc = 12 V. 7. Same as 5 above except Vcc = 12 V.
Rev.1.0, Sep.22.2003, page 10 of 13
M52055P
Application Example
Rev.1.0, Sep.22.2003, page 11 of 13
M52055P
USAGE NOTES
1. The input impedance is 20 k (standard value). 2. Output drive current should be 5 mA or less when using this IC. 3. Note that voltage applied to the control pins (pins 2, 7 and 12) should be less than the power supply voltage (Vcc) and more than the ground voltage (GND). The following shows an internal equivalent circuit coupled to a control pin.
4. Output pins are the emitter follower type. The following drive current is applied inside the IC normally. If the drive performance is insufficient, apply external drive current within the range shown in 2.
Power supply voltage (Vcc) 5V 9V 12 V Drive current in the IC (standard value) 190 A 380 A 530 A
Rev.1.0, Sep.22.2003, page 12 of 13
M52055P
16P4
JEDEC Code - Weight(g) 1.0 Lead Material Alloy 42/Cu Alloy
MMP
Plastic 16pin 300mil DIP
Package Dimensions
EIAJ Package Code DIP16-P-300-2.54
E
1
8
D
Symbol
L
e
b1
b
b2
A1
SEATING PLANE
A
A2
A A1 A2 b b1 b2 c D E e e1 L
Dimension in Millimeters Min Nom Max - 4.5 - - 0.51 - - - 3.3 0.4 0.5 0.59 1.4 1.5 1.8 0.9 1.0 1.3 0.22 0.27 0.34 18.8 19.0 19.2 6.15 6.3 6.45 - - 2.5 - - 7.62 - - 3.0 0 - 15
e1
Rev.1.0, Sep.22.2003, page 13 of 13
16 9
c
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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